unisonic technologies co., ltd ut4411 power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2015 unisonic technologies co., ltd qw-r502-191.c p-channel enhancement mode ? description the ut4411 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. ? features * r ds(on) < 32m ? @ v gs = -10 v, i d = -8 a * low capacitance * optimized gate charge * fast switching capability * avalanche energy specified ? symbol gate source drain ? ordering information ordering number package pin assignment packing 123456 7 8 UT4411G-S08-R sop-8 s s s g d d d d tape reel note: pin assignment: g: gate d: drain s: source ? marking
ut4411 power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-191.c ? absolute maximum ratings (t a = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss -30 v gate-source voltage v gss 20 v continuous drain current i d -8 a pulsed drain current i dm -40 a power dissipation p d 3 w junction temperature t j +150 c strong temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol min typ max unit junction-to-ambient ja 54 75 c/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =-250 a -30 v zero gate voltage drain current i dss v ds =-24 v, v gs =0 v -1 a gate-body leakage current i gss v ds =0 v, v gs = 20 v 100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =-250 a -1.2 -2.4 v on state drain current i d ( on ) v ds =-5v, v gs =-10 v -40 a static drain-source on-resistance r ds(on) v gs =-10 v, i d =-8 a 26 32 m ? v gs =-4.5 v, i d =-5 a 50 55 dynamic parameters input capacitance c iss v ds =-15v, v gs =0v, f=1mhz 1200 1400 pf output capacitance c oss 170 reverse transfer capacitance c rss 122 switching parameters total gate charge q g v ds =-15v, v gs =-10v, i d =-8a 18.4 23 nc gate source charge q gs 2.7 gate drain charge q gd 4.9 turn-on delay time t d ( on ) v gs =-10v,v ds =-10v, i d =-0.25a, r gen =25 ? 38 ns turn-on rise time t r 47 turn-off delay time t d ( off ) 300 turn-off fall-time t f 130 source- drain diode ratings and characteristics diode forward voltage v sd i s =-1a,v gs =0v -0.76 -1 v maximum body-diode continuous current i s -4.2 a notes: 1. pulse width limited by t j(max) 2. pulse width 300us, duty cycle 0.5% max. 3. surface mounted on 1 in 2 copper pad of fr4 board, t 10s.
ut4411 power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-191.c ? typical characteristics drain current,-i d (a) drain current,-i d (a) 1.60 1.40 1.20 1.00 0.80 025 50 75 100 125 150 175 25 20 15 10 5 0 10 15 20 25 30 35 40 45 50 55 60 drain current,-i d (a) drain to source on-resistance, r ds(on) (m ) on-resistance vs. drain current and gate voltage v gs =-10v v gs =-4.5v i d =-7.5a normalized on-resistance junction temperature ( ) on-resistance vs. junction temperature v gs =-10v v gs =-4.5v 125 25 body-diode characteristics 1.0e+01 1.0e+00 1.0e-01 1.0e-02 1.0e-03 1.0e-04 1.0e-05 1.0e-06 reverse drain current,-i s (a) 0.0 0.2 0.4 0.6 0.8 1.0 body diode forward voltage,-v sd (v) 10 9 8 7 6 5 4 3 0 10 20 30 40 50 60 70 80 on-resistance vs. gate-source voltage drain to source on-resistance, r ds(on) (m ) gate to source voltage,-v gs (v) i d =-7.5a 125 25
ut4411 power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-191.c ? typical characteristics(cont.) c a p a c i t a n c e ( p f ) gate to source voltage,-v gs (v) 100.0 10.0 1.0 0.1 0.1 1 10 100 maximum forward biased safe operating area (note e) drain to source voltage,-v ds (v) t j(max) =150 t a =25 dc 10 s 100 s 1ms 10ms 0.1s 1s 10s single pulse power rating junction- to-ambient (note e) pulse width (s) 40 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 t j(max) =150 t a =25 r ds(on) limited normalized transient thermal resistance,z ja
ut4411 power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-191.c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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